High-K Dielectric Inorganic-Organic Hybrid Thin Films for Field Effect Transistors (FETFT)

Authors

  • Elena Emanuela VALCU (HERBEI) "Dunarea de Jos" University of Galati, Romania
  • Viorica MUSAT "Dunarea de Jos" University of Galati, Romania
  • Susanne OERTEL Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany
  • Michael JANK Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany

Keywords:

hybrid dielectric materials, thin film transistors, morphology, I-V and C-V measurements

Abstract

The paper discusses the challenges to develop thin films transistors for flexible transparent electronics, displays etc. The sol-gel preparation of hybrid thin films based on dielectric oxides nanoparticles (SiO2 NPs, ZrO2 NPs) and polymethy methacrylate (PMMA) is presented. The high-k hybrid thin films, evaluated as gate dielectric in a MIM structures, were deposed by spin-coating teqhnique. The multilayers (thin films) configuration of MIM structures were investigated by scanning electron microscopy (SEM) and electrical properties. The I-V and C-V curves showed a better dielectric behavior of hybrid films with respect to the simple PMMA films. Dielectric constant values of 2.1, 3.4 and 5.4 have been obtained for PMMA, ZrO2-PMMA and SiO2-PMMA films, respectively.

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Published

2013-06-15

Issue

Vol. 36 No. 2 (2013)

Section

Articles

How to Cite

1.
High-K Dielectric Inorganic-Organic Hybrid Thin Films for Field Effect Transistors (FETFT). Ann_UGAL_MMS [Internet]. 2013 Jun. 15 [cited 2026 Nov. 2];36(2):64-8. Available from: https://ojs.ugal.ro/index.php/mms/article/view/2842

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