High-K Dielectric Inorganic-Organic Hybrid Thin Films for Field Effect Transistors (FETFT)

Elena Emanuela VALCU (HERBEI); Viorica MUSAT; Susanne OERTEL; Michael JANK

Auteur/ices

Elena Emanuela VALCU (HERBEI) "Dunarea de Jos" University of Galati, Romania
Viorica MUSAT "Dunarea de Jos" University of Galati, Romania
Susanne OERTEL Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany
Michael JANK Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany

Mots-clés :

hybrid dielectric materials, thin film transistors, morphology, I-V and C-V measurements

Résumé

The paper discusses the challenges to develop thin films transistors for flexible transparent electronics, displays etc. The sol-gel preparation of hybrid thin films based on dielectric oxides nanoparticles (SiO₂ NPs, ZrO₂ NPs) and polymethy methacrylate (PMMA) is presented. The high-k hybrid thin films, evaluated as gate dielectric in a MIM structures, were deposed by spin-coating teqhnique. The multilayers (thin films) configuration of MIM structures were investigated by scanning electron microscopy (SEM) and electrical properties. The I-V and C-V curves showed a better dielectric behavior of hybrid films with respect to the simple PMMA films. Dielectric constant values of 2.1, 3.4 and 5.4 have been obtained for PMMA, ZrO₂-PMMA and SiO₂-PMMA films, respectively.